STP21NM60ND - STMicroelectronics

STP21NM60ND N-channel MOSFET

6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-sh.

Features

Order codes STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND VDSS @ TJmax 650 V 650 V 650 V 650 V RDS(on) max 0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω ID 17 A 17 A 17 A 17 A
• Intrinsic fast-recovery body diode
• Worldwide best RDS(on)
*area amongst the fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche capabilities Applications
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• Switching applications Description 6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generatio.