STP21N65M5 - STMicroelectronics

STP21N65M5 N-CHANNEL MOSFET

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicat.

Features

Order codes VDSS @ TJmax RDS(on) max ID PW STB21N65M5 STF21N65M5 17 A 125 W 17 A(1) 30 W STI21N65M5 710 V < 0.179 Ω STP21N65M5 17 A 125 W STW21N65M5 1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on)
* area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested Application Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structu.