STP21N90K5 - STMicroelectronics

STP21N90K5 N-CHANNEL MOSFET

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high effi.

Features

Order codes VDSS RDS(on)max ID PW STB21N90K5 250 W STF21N90K5 900 V STP21N90K5 STW21N90K5 40 W < 0.299 Ω 18.5 A 250 W
■ TO-220 worldwide best RDS(on)
■ Worldwide best FOM (figure of merit)
■ Ultra low gate charge
■ 100% avalanche tested
■ Zener-protected Applications
■ Switching applications TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Description These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an in.