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STP21NM60ND |
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| Part Number | STP21NM60ND |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | 6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structu... |
| Features |
Order codes
STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND
VDSS @ TJmax
650 V 650 V 650 V 650 V
RDS(on) max
0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω
ID
17 A 17 A 17 A 17 A
• Intrinsic fast-recovery body diode • Worldwide best RDS(on)*area amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • Extremely high dv/dt and avalanche capabilities Applications * • Switching applications Description 6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generatio... |
| Document |
 STP21NM60ND Data Sheet
PDF 782.82KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP21NM60N |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 2 | STP21NM60ND |
INCHANGE |
N-Channel MOSFET |
|
| 3 | STP21NM50N |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 4 | STP21N05L |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
|
| 5 | STP21N05LFI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
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