STP200NF04 - ST Microelectronics

STP200NF04 N-CHANNEL POWER MOSFET

This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 12 3 I2PAK Figure 2: Internal Schematic Di.

Features

Type STB200NF04 STB200NF04-1 STP200NF04 s s Figure 1: Package ID 120 A 120 A 120 A Pw 310 W 310 W 310 W 3 3 1 2 VDSS 40 V 40 V 40 V RDS(on) < 0.0037 Ω < 0.0037 Ω < 0.0037 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220 1 D2PAK DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 12 3 I2PAK Figure 2: Interna.