This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITC.
SOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(
*
*) Drain Current (continuous) at TC = 100°C ID IDM(
•) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperature (
•) Pulse width limited by safe operating area.
(
*
*) Current Limited by Package
Value 30 30 ± 20 120 120 480 300 2.0 1.5 1.45 -55 to 175
Unit V V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP200NF04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STP200NF04L |
ST Microelectronics |
N-CHANNEL STripFET II MOSFET | |
3 | STP200N3LL |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STP200N4F3 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STP200N6F3 |
ST Microelectronics |
Power MOSFETs | |
6 | STP2021 |
Sun Microsystems |
Power Management Controller | |
7 | STP2022 |
Sun Microsystems |
Multi Interface Chip | |
8 | STP2024 |
Sun Microsystems |
System Logic Chip | |
9 | STP20N06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STP20N06FI |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STP20N10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
12 | STP20N10L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |