STP16NE06L - ST Microelectronics

STP16NE06L N-CHANNEL Power MOSFET

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibili.

Features

oltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. O perating Junction Temperature o o o TO-220FP INTERNAL SCHEMATIC DIAGRAM Value ST P16NE06L STP16NE06LF P 60 60 ± 15 16 10 64 60 0.4  6 -65 to 175 175 ( 1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V 11 7 64 30 0.2 2000 A A A W W/ C V V/ns o o o C C (
•) Pulse width limited by.