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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP11NM60 ·FEATURES ·Typical RDS(on)=0.4Ω ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.
·Typical RDS(on)=0.4Ω
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching application
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
11 7
44
PD
Total Dissipation
160
Tj
Operating Junction Temperature
-65~150
Tstg
Storage Temperature
-65~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SY.
STP11NM60 - ST Microelectronics
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s Power.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP11NM60A |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 2 | STP11NM60AFP |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 3 | STP11NM60FD |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 4 | STP11NM60FD |
INCHANGE |
N-Channel MOSFET |
|
| 5 | STP11NM60FDFP |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 6 | STP11NM60FDFP |
INCHANGE |
N-Channel MOSFET |
|
| 7 | STP11NM60FP |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 8 | STP11NM60FP |
INCHANGE |
N-Channel MOSFET |
|
| 9 | STP11NM60N |
ST Microelectronics |
N-CHANNEL Power MOSFET |
|
| 10 | STP11NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 11 | STP11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 12 | STP11NM60ND |
INCHANGE |
N-Channel MOSFET |
|