STP11NM60 |
Part Number | STP11NM60 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP11NM60 ·FEATURES ·Typical RDS(on)=0.4Ω ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot... |
Features |
·Typical RDS(on)=0.4Ω ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 11 7 44 PD Total Dissipation 160 Tj Operating Junction Temperature -65~150 Tstg Storage Temperature -65~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SY... |
Document |
STP11NM60 Data Sheet
PDF 201.20KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | STP11NM60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STP11NM60A |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STP11NM60AFP |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
4 | STP11NM60FD |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STP11NM60FD |
INCHANGE |
N-Channel MOSFET |