The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performan.
ers allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature TO-220 TO-220FP 3 1 D PAK 2 3 12 I2PAK INTERNAL SCHEMATIC DIAGRAM.
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP11NM60FD |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STP11NM60FD |
INCHANGE |
N-Channel MOSFET | |
3 | STP11NM60FDFP |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
4 | STP11NM60FDFP |
INCHANGE |
N-Channel MOSFET | |
5 | STP11NM60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STP11NM60 |
INCHANGE |
N-Channel MOSFET | |
7 | STP11NM60A |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
8 | STP11NM60AFP |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
9 | STP11NM60N |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
10 | STP11NM60N |
INCHANGE |
N-Channel MOSFET | |
11 | STP11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET | |
12 | STP11NM60ND |
INCHANGE |
N-Channel MOSFET |