STP11NM60N - ST Microelectronics

STP11NM60N N-CHANNEL Power MOSFET

This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applica.

Features

Type STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 3 2 1 2 1 10A 10A 10A (1) 10A TO-220 IPAK 3 1. Limited only by maximum temperature allowed
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■ 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel DPAK 1 2 TO-220FP Description This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate .