STP11NM60 |
Part Number | STP11NM60 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resista... |
Features |
ers allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
TO-220
TO-220FP
3 1
D PAK
2
3 12
I2PAK
INTERNAL SCHEMATIC DIAGRAM... |
Document |
STP11NM60 Data Sheet
PDF 592.59KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP11NM60 |
INCHANGE |
N-Channel MOSFET | |
2 | STP11NM60A |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STP11NM60AFP |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
4 | STP11NM60FD |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STP11NM60FD |
INCHANGE |
N-Channel MOSFET |