STN18T20 - Stanson Technology

STN18T20 MOSFET

STN18T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where .

Features

Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Symbol VDSS TA=25℃ TA=100℃ VGSS ID IDM Typical 200 ±30 18 11.4 36 Avalanche Current IAS 17 Power Dissipation TA=25℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient PD TJ TSTG RθJA 112 150 -55/150 80 Unit V V A A mJ W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN18T20 2012. V1 STN18T20 N Channel Enhancement Mode MOSFET 18.0A ELECTRICAL CHARACTERISTICS ( Ta = 25 U.