STN1012 - Stanson Technology

STN1012 MOSFET

STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power m.

Features

09. V1 STN1012 Dual N Channel Enhancement Mode MOSFET 0.65A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage Gate-Source Voltage TA=25℃ Continuous Drain Current (TJ=150℃) TA=80℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature Storage Temperature Range VDSS VGSS ID IDM IS PD TJ TSTG 20 +/-12 0.65 0.45 1.0 0.3 0.27 0.16 -55/150 -55/150 V V A A A W ℃ ℃ STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansont.