STN1810 - Stanson Technology

STN1810 MOSFET

STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These applications such as notebook computer power management and other battery powered ci.

Features

A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 100 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM ±20 8.0 6.0 12 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ 2.3 2.8 1.8 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright .