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STN18T20 |
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| Part Number | STN18T20 |
| Manufacturer | Stanson Technology |
| Description | STN18T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi... |
| Features |
Voltage
Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current
Symbol
VDSS
TA=25℃ TA=100℃
VGSS ID
IDM
Typical
200
±30 18 11.4 36
Avalanche Current
IAS 17
Power Dissipation
TA=25℃
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
PD TJ TSTG RθJA
112 150 -55/150 80
Unit V V A A mJ W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2008, Stanson Corp.
STN18T20 2012. V1
STN18T20
N Channel Enhancement Mode MOSFET
18.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25 U... |
| Document |
 STN18T20 Data Sheet
PDF 279.31KB |
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