Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STN1810 |
Stanson Technology |
MOSFET |
|
| 2 | STN18T20 |
Stanson Technology |
MOSFET |
|
| 3 | STN101050BL25 |
EATON |
TVS Diode ESD suppressor |
|
| 4 | STN1012 |
Stanson Technology |
MOSFET |
|
| 5 | STN1100 |
ScanToo |
Multiprotocol OBD-II to UART Interpreter |
|
| 6 | STN1110 |
OBD Solutions |
Multiprotocol OBD to UART Interpreter |
|
| 7 | STN1110-I |
OBD Solutions |
Multiprotocol OBD to UART Interpreter |
|
| 8 | STN1170 |
OBD Solutions |
Multiprotocol OBD to UART Interpreter |
|
| 9 | STN11XX |
ScanToo |
Multiprotocol OBD-II to UART Interpreter |
|
| 10 | STN1304 |
Stanson Technology |
MOSFET |
|
| 11 | STN1A60 |
SemiWell Semiconductor |
(STN1A60 / STN1A80) Bi-Directional Triode Thyristor |
|
| 12 | STN1A60 |
WINSEMI |
Bi-Directional Triode Thyristor |
|