STL210N4LF7AG - STMicroelectronics

STL210N4LF7AG N-Channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL210N4LF7AG Product summary Order code STL210N4LF7AG Marking 210N4LF7 Package PowerFLAT.

Features

Order code STL210N4LF7AG VDS 40 V RDS(on) max. 1.6 mΩ
• AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
• Wettable flank package ID 120 A G(4) Applications
• Switching applications S(1, 2, 3) 12 34 Top View AM15540v2 Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Pro.