STL220N6F7 - STMicroelectronics

STL220N6F7 N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced G(4) trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 12 34 Top View AM15540v2 Product status link STL220N6F7 Product summary Order code STL220N6.

Features

imum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C ID (1) Drain current (continuous) at TC = 100 °C IDM (2) (1) Drain current (pulsed) ID (3) Drain current (continuous) at Tpcb = 25 °C ID (3) Drain current (continuous) at Tpcb = 100 °C IDM (2) (3) EAS Drain current (pulsed) Single pulse avalanche energy (starting Tj =25 °C, IAS = 20 A) PTOT (1) Total power dissipation at TC = 25 °C PTOT (3) Tj Total power dissipation at Tpcb = 25 °C Operating junction temperature range Storage temperature range 1. T.