STL21N65M5 - STMicroelectronics

STL21N65M5 N-channel Power MOSFET

The device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications.

Features

Type STL21N65M5 VDSS @ TJmax 710 V RDS(on) max < 0.190 Ω ID 17 A (1) ' $ 3 3 3 "OTTOMVIEW 1. The value is rated according to Rthj-case
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■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 0OWER&,!4˜X (6 Application Switching applications Description The device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among s.