STL210N4LF7AG |
Part Number | STL210N4LF7AG |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charg... |
Features |
Order code STL210N4LF7AG
VDS 40 V
RDS(on) max. 1.6 mΩ
• AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package ID 120 A G(4) Applications • Switching applications S(1, 2, 3) 12 34 Top View AM15540v2 Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Pro... |
Document |
STL210N4LF7AG Data Sheet
PDF 579.20KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STL210N4F7AG |
STMicroelectronics |
N-channel Power MOSFET | |
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