STL220NS6F7 - STMicroelectronics

STL220NS6F7 N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 12 34 Top View AM15540v3 Order code STL220NS6F7 Table 1: Device summary Marking 220NS6F7 Package Powe.

Features

Order code STL220NS6F7 VDS 60 V RDS(on) max 1.6 mΩ ID 250 A
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Embedded Schottky diode
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness Applications
 Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 12 34 Top View AM15540v3 Order code STL220NS6F7 Table 1: Dev.