STI33N65M2 - STMicroelectronics

STI33N65M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Order codes STB33N65M2 STF33N65M2 STP33N65M2 STI33N.

Features

Order codes STB33N65M2 STF33N65M2 STP33N65M2 STI33N65M2 VDS RDS(on) max ID 650 V 0.14 Ω 24 A
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected Figure 1. Internal schematic diagram , TAB Applications
• Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency conve.