' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting produc.
Order codes
STB30N65M5 STF30N65M5 STI30N65M5 STP30N65M5 STW30N65M5
VDSS @ TJMAX
710 V 710 V 710 V 710 V 710 V
RDS(on) max. ID
< 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω
22 A 22 A(1) 22 A 22 A 22 A
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on)
*area
■ Higher VDSS rating
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
■ High dv/dt capability
Applications
3 1
D²PAK
3 2 1
TO-220FP
123
I²PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
$
■ Switching applications
Description
'
These devices are N-chan.
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STI30NM50N |
STMicroelectronics |
Power MOSFET | |
2 | STI30NM60N |
STMicroelectronics |
N-channel MOSFET | |
3 | STI30NM60ND |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STI300N4F6 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STI3220 |
ST Microelectronics |
Motion Estimation Processor | |
6 | STI32N65M5 |
STMicroelectronics |
N-channel MOSFET | |
7 | STI32N65M5 |
INCHANGE |
N-Channel MOSFET | |
8 | STI33N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STI33N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STI3408 |
SUNTO |
1.0A Synchronous Step-Down Converter | |
11 | STI3408B |
SUNTO |
1.2A Synchronous Step-Down Converter | |
12 | STI3470 |
SUNTO |
2.0A Synchronous Step-Down Converter |