STI33N65M2 |
Part Number | STI33N65M2 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switc... |
Features |
Order codes
STB33N65M2 STF33N65M2 STP33N65M2 STI33N65M2
VDS
RDS(on) max
ID
650 V 0.14 Ω 24 A
• Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram , TAB Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency conve... |
Document |
STI33N65M2 Data Sheet
PDF 366.50KB |
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