STI300N4F6 - STMicroelectronics

STI300N4F6 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 123 I²PAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order code STI300N4F6 Marking 300N4F6 Package I²PAK S(3.

Features

Order code STI300N4F6 VDS 40 V RDS(on) max ID 2.2 mΩ 160 A(1) 1. Limited by wire bonding
■ Standard level VGS(th)
■ 100% avalanche rated Applications
■ Automotive switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 123 I²PAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order code STI300N4F6 Marking 300N4F6 Package I²PAK S(3) AM01474v1 Packaging Tube Fe.