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STI32N65M5 - STMicroelectronics

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STI32N65M5 N-channel MOSFET

These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Obsolete P Product status link STF32N65.

Features

TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested Package TO-220FP I2PAK TO-220 TO-247 AM01475v1_noZen Applications
• Switching applications Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known Power.

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Datasheet STI32N65M5 - INCHANGE STI32N65M5

·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.

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