These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Obsolete P Product status link STF32N65.
TAB
3 12
TO-220FP
) TAB t(s 3 c 2
TO-220 1
rodu D(2, TAB) lete P G(1)
roduct(s) - Obso S(3)
I2PAK 1 2 3
3 12
TO-247
Order codes
VDS at Tjmax.
RDS(on) max.
ID
STF32N65M5
STI32N65M5 STP32N65M5
710 V
119 mΩ
24 A
STW32N65M5
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
Package TO-220FP
I2PAK TO-220 TO-247
AM01475v1_noZen
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known Power.
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STI3220 |
ST Microelectronics |
Motion Estimation Processor | |
2 | STI300N4F6 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STI30N65M5 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STI30N65M5 |
INCHANGE |
N-Channel MOSFET | |
5 | STI30NM50N |
STMicroelectronics |
Power MOSFET | |
6 | STI30NM60N |
STMicroelectronics |
N-channel MOSFET | |
7 | STI30NM60ND |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STI33N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STI33N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STI3408 |
SUNTO |
1.0A Synchronous Step-Down Converter | |
11 | STI3408B |
SUNTO |
1.2A Synchronous Step-Down Converter | |
12 | STI3470 |
SUNTO |
2.0A Synchronous Step-Down Converter |