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STI30N65M5 |
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| Part Number | STI30N65M5 |
| Manufacturer | INCHANGE |
| Description | ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Con... |
| Features |
·Drain Current –ID=22A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 139mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pluse 88 A PD Total Dissipation @TC=25℃ 140 W TJ Max. Operatin... |
| Document |
 STI30N65M5 Data Sheet
PDF 309.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STI30N65M5 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | STI30NM50N |
STMicroelectronics |
Power MOSFET |
|
| 3 | STI30NM60N |
STMicroelectronics |
N-channel MOSFET |
|
| 4 | STI30NM60ND |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | STI300N4F6 |
STMicroelectronics |
N-channel Power MOSFET |
|