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·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT.
·Drain Current
–ID= 18A@ TC=25℃
·Drain Source Voltage-
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 190mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Low Drain-Source On-Resistance
APPLICATIONS
·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
.
STI20N65M5 - STMicroelectronics
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, whic.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STI20N60M2-EP |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | STI200N6F3 |
ST Microelectronics |
Power MOSFETs |
|
| 3 | STI21N65M5 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | STI21N65M5 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 5 | STI21NM60ND |
STMicroelectronics |
N-channel MOSFET |
|
| 6 | STI22NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 7 | STI22NM60N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 8 | STI23NM60N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 9 | STI23NM60ND |
STMicroelectronics |
N-channel Power MOSFET |
|
| 10 | STI24N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 11 | STI24N60M6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 12 | STI24NM60N |
STMicroelectronics |
N-channel MOSFET |
|