STI21NM60ND - STMicroelectronics

STI21NM60ND N-channel MOSFET

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS ph.

Features

Type www.DataSheet4U.com VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 3 3 1 2 3 1 2 1 STB21NM60ND STI21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND 17 A 17 A 17 A(1) 17 A 17 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed
■
■
■
■
■ 3 12 2 1 3 The worldwide best RDS(on)
*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. I2PAK TO-247 Internal schematic diagram Ap.