STI20N60M2-EP - STMicroelectronics

STI20N60M2-EP N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency conv.

Features

Order code VDS RDS(on) max. STI20N60M2-EP 600 V 0.278 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected ID 13 A Applications
• Switching applications
• Tailored for very high frequency converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-.