STI23NM60ND - STMicroelectronics

STI23NM60ND N-channel Power MOSFET

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in partic.

Features

www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω ID 1 3 3 12 STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND 20 A 20 A 20 A(1) 20 A 20 A D²PAK 2 1 3 I²PAK TO-247 3 1 2 1 2 3 1. Limited by wire bonding
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■ The worldwide best RDS(on)
* area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities TO-220 TO-220FP Figure 1. Internal schematic diagram Application
■ Switching a.