STI24NM60N - STMicroelectronics

STI24NM60N N-channel MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $OR4!" ' 3.

Features

Order codes STF24NM60N STI24NM60N STP24NM60N STW24NM60N
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■ TAB VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max. < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 17 A 1 3 2 3 12 17 A 17 A 17 A TO-220FP I2PAK 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 2 1 3 TO-220 TO-247 Applications
■ Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company.