STI18NM60N - STMicroelectronics

STI18NM60N N-channel Power MOSFET

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 3 2 1 TO-220 123 I²PAK 3 1 D²P.

Features

Order codes VDSS (@Tjmax) RDS(on) max. ID PW STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.