isc N-Channel MOSFET Transistor INCHANGE Semiconductor STHV102 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.
·With TO-3PN packaging
·High speed switching
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
1000
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
4.2 2.6
16
PD
Total Dissipation
150
Tj
Operating Junction Temperature
-65~150
Tstg
Storage Temperature
-65~150
UNIT V V A A W ℃ ℃
·THERMAL CH.
,t..=,L= S~OG©rnS3@-~1[H]J~O©lMfrnS3@O~ON©~ STHV102 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DAT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STHV748 |
STMicroelectronics |
2A high-speed pulser | |
2 | STHV82 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
3 | STHV82FI |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
4 | STHVDAC-253MTG |
STMicroelectronics |
Antenna tuning circuit | |
5 | STHVDAC-256MTG |
STMicroelectronics |
Antenna tuning circuit | |
6 | STH1061 |
SEMTECH ELECTRONICS |
NPN Plastic Power Transistor | |
7 | STH10N80K5-2AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
8 | STH10NA50 |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
9 | STH10NA50FI |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
10 | STH10NC60 |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
11 | STH10NC60FI |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
12 | STH10NK60ZFI |
STMicroelectronics |
N-CHANNEL Power MOSFET |