STHV102 |
Part Number | STHV102 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor STHV102 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-L... |
Features |
·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 4.2 2.6 16 PD Total Dissipation 150 Tj Operating Junction Temperature -65~150 Tstg Storage Temperature -65~150 UNIT V V A A W ℃ ℃ ·THERMAL CH... |
Document |
STHV102 Data Sheet
PDF 205.38KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STHV102 |
STMicroelectronics |
N-channel Power MOS Transistor | |
2 | STHV748 |
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2A high-speed pulser | |
3 | STHV82 |
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N-Channel Enhancement Mode Power MOS Transistor | |
4 | STHV82FI |
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N-Channel Enhancement Mode Power MOS Transistor | |
5 | STHVDAC-253MTG |
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Antenna tuning circuit |