STH10NC60FI - ST Microelectronics

STH10NC60FI N-CHANNEL Power MOS MOSFET

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERT.

Features

source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 10 6.3 40 160 1.28 Value STW10NC60 600 600 ±30 10 (
*) 6.3 (
*) 40 (
*) 60 0.48 3.5 2500
  – 55 to 150 (1)ISD ≤ 10A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (
*) Limited only by Maximum Temperature Allowed Unit V V V A A A W W/°C V/ns V °C STH10NC60FI (
•)Pulse width limited by safe operating area February .