STH10N80K5-2AG - STMicroelectronics

STH10N80K5-2AG Automotive-grade N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STH10N80K5-2AG Product summary Order code STH10.

Features

Order code STH10N80K5-2AG VDS RDS(on) max. ID 800 V 0.68 Ω 8A
• AEC-Q101 qualified
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested G(1) S(2, 3) Applications
• Switching applications DTG1S23NZ Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link .