STHV102 |
Part Number | STHV102 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | ,t..=,L= S~OG©rnS3@-~1[H]J~O©lMfrnS3@O~ON©~ STHV102 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STHV102 Voss 1000 V Ros(on) 3.5 Q 10 4.2 A • 1000 V - VERY HIGH VOLT... |
Features |
0) Gate-source voltage Drain current (cont.) at Tc=25°C Drain current (cont.) at Tc = 100°C Drain current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature
(e) Pulse width limited by safe operating area
June 1988
1000 ±20 4.2 2.6 16 125
-65 to 150 150
V V A A A W W/oC °C °C
1/5 605
STHV102
THERMAL DATA
Rthj _ case Thermal resistance junction-case
TL
Maximum lead temperature for soldering purpose
max
1
275
ELECTRICAL CHARACTERISTICS (Tease = 25°C unless otherwise specified)
Parameters
Test Conditions
OFF
V(BR) OSS Dra... |
Document |
STHV102 Data Sheet
PDF 159.27KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STHV102 |
INCHANGE |
N-Channel MOSFET | |
2 | STHV748 |
STMicroelectronics |
2A high-speed pulser | |
3 | STHV82 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
4 | STHV82FI |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
5 | STHVDAC-253MTG |
STMicroelectronics |
Antenna tuning circuit |