STH185N10F3-2 - STMicroelectronics

STH185N10F3-2 N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. S(2, 3) Order code STH185N10F3-2 AM01475v5 Table 1: Device summary Marking Packages 185N10F3 H2PAK-2 Packing Tape and reel October 2016 DocID026910 Rev 3 This is infor.

Features

Order code STH185N10F3-2 VDS 100 V RDS(on) max. 4.5 mΩ ID 180 A Figure 1: Internal schematic diagram D(TAB) G(1)
 AEC-Q101 qualified
 Ultra low on-resistance
 100% avalanche tested Applications
 Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. S(2, 3) Order code STH185N10F3-2 AM01475v5 Table 1: Device summary Marking Packages 185N10F3 H2PAK-2 Packing Tape and reel October 2016 DocID026910 Rev 3 This is inform.