STH180N10F3-2 - STMicroelectronics

STH180N10F3-2 N-Channel Power MOSFET

This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. S(2,3) NCHG1DTABS23 Product status link STH180N10F3-2 Product summary Order code STH180N10F3-2 Marking 180N10F3 Package H2PAK-2 Packing Tape and reel DS7317 - Rev 3 -.

Features

Order code VDS STH180N10F3-2 100 V
• Ultra low on-resistence
• 100% avalanche tested RDS(on) max. 4.5 mΩ ID 180 A Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. S(2,3) NCHG1DTABS23 Product status link STH180N10F3-2 Product summary Order code STH180N10F3-2 Marking 180N10F3 Package H2PAK-2 Packing Tape and reel DS7317 - Rev 3 - March 2022 For further information contact your local STMicroelect.