These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH110N10F7-2 STH110N10F7-6 110N10F7 H2PAK-2 H2PAK-6 Tap.
Order code
STH110N10F7-2 STH110N10F7-6
VDS 100 V
RDS(on) max.
6.5 mΩ
ID PTOT 110 A 150 W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Table 1: Device summary
Order code
Marking Package Packing
STH110N10F7.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH110N10F7-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STH110N10F7-2 |
INCHANGE |
N-Channel MOSFET | |
3 | STH110N7F6-2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STH1061 |
SEMTECH ELECTRONICS |
NPN Plastic Power Transistor | |
5 | STH10N80K5-2AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
6 | STH10NA50 |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
7 | STH10NA50FI |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
8 | STH10NC60 |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
9 | STH10NC60FI |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
10 | STH10NK60ZFI |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
11 | STH12N120K5-2 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
12 | STH12N120K5-2AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET |