STH12NA60 - ST Microelectronics

STH12NA60 N-CHANNEL Power MOS MOSFET

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-A.

Features

TW12NA60 VD S V DG R V GS ID ID ID M(
•) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH12NA60FI V V V 7 4.4 48 80 0.64 4000 A A A W W/o C V o o 600 600 ± 30 12 7.6 48 190 1.52  -65 to 150 150 C C (
•) Pulse width limited by safe operating area November 1996 1/11 STH12NA60/.