This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-A.
TW12NA60 VD S V DG R V GS ID ID ID M(
•) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH12NA60FI V V V 7 4.4 48 80 0.64 4000 A A A W W/o C V
o o
600 600 ± 30 12 7.6 48 190 1.52 -65 to 150 150
C C
(
•) Pulse width limited by safe operating area
November 1996
1/11
STH12NA60/.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STH12NA60 |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
2 | STH12N120K5-2 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
3 | STH12N120K5-2AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
4 | STH12N60 |
ST Microelectronics |
N-Channel Enhancement Mode Fast Power MOS Transistor | |
5 | STH12N60FI |
ST Microelectronics |
N-Channel Enhancement Mode Fast Power MOS Transistor | |
6 | STH1061 |
SEMTECH ELECTRONICS |
NPN Plastic Power Transistor | |
7 | STH10N80K5-2AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
8 | STH10NA50 |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
9 | STH10NA50FI |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
10 | STH10NC60 |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
11 | STH10NC60FI |
ST Microelectronics |
N-CHANNEL Power MOS MOSFET | |
12 | STH10NK60ZFI |
STMicroelectronics |
N-CHANNEL Power MOSFET |