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STH12NA60 |
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| Part Number | STH12NA60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
TW12NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Unit STH12NA60FI V V V 7 4.4 48 80 0.64 4000 A A A W W/o C V o o 600 600 ± 30 12 7.6 48 190 1.52 -65 to 150 150 C C ( •) Pulse width limited by safe operating area November 1996 1/11 STH12NA60/... |
| Document |
 STH12NA60 Data Sheet
PDF 243.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STH12NA60FI |
STMicroelectronics |
N-CHANNEL Power MOS MOSFET |
|
| 2 | STH12N120K5-2 |
STMicroelectronics |
N-CHANNEL Power MOSFET |
|
| 3 | STH12N120K5-2AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET |
|
| 4 | STH12N60 |
ST Microelectronics |
N-Channel Enhancement Mode Fast Power MOS Transistor |
|
| 5 | STH12N60FI |
ST Microelectronics |
N-Channel Enhancement Mode Fast Power MOS Transistor |
|