STH110N7F6-2 - STMicroelectronics

STH110N7F6-2 N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 $0Y Order code STH110N7F6-2 Table 1. Device summary Marking Package 110N7F6 H2PAK-2 March 2015 This is information on a product in full production..

Features

TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram '7$%
* Order code VDS RDS(on)max. ID PTOT STH110N7F6-2 68 V 0.0063 Ω 110 A 176 W
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 $0Y Order code STH110N7F6-2 Table 1. Device summary Marking Package 110N7F6 H2PAK-2 March .