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STH110N7F6-2 |
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| Part Number | STH110N7F6-2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 ... |
| Features |
TAB 2 3 1
H2PAK-2
Figure 1. Internal schematic diagram
' 7$%
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Order code VDS RDS(on)max. ID PTOT STH110N7F6-2 68 V 0.0063 Ω 110 A 176 W
• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 $0Y Order code STH110N7F6-2 Table 1. Device summary Marking Package 110N7F6 H2PAK-2 March ... |
| Document |
 STH110N7F6-2 Data Sheet
PDF 911.20KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STH110N10F7-2 |
STMicroelectronics |
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| 2 | STH110N10F7-2 |
INCHANGE |
N-Channel MOSFET |
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| 3 | STH110N10F7-6 |
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N-CHANNEL POWER MOSFET |
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| 4 | STH1061 |
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| 5 | STH10N80K5-2AG |
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