STGW45NC60VD - ST Microelectronics

STGW45NC60VD Very Fast IGBT

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking GW45NC60VD Package TO-247 long leads Packaging Tube STGW45NC60VD March 2008 Rev 1 1/15 www.st.com 15 Contents STGW45NC60VD Cont.

Features

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■ Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode 3 Applications
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■ 2 1 High frequency inverters UPS Motor drivers Induction heating TO-247 long leads Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking GW45NC60VD Package TO-247 long leads Packaging Tube STGW45NC60VD March 2008 Rev 1 1/15 www.st.com 15 Contents STGW45NC60VD Cont.