STGW45HF60WDI - STMicroelectronics

STGW45HF60WDI IGBT

The STGW45HF60WDI is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). TO-247 3 2 1 Figure 1. Internal schematic diagram Table 1. Device summary Order code Ma.

Features

■ Improved Eoff at elevated temperature
■ Low VF soft recovery antiparallel diode Applications
■ Welding
■ Induction heating
■ Resonant converters Description The STGW45HF60WDI is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). TO-247 3 2 1 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STGW45HF60WDI GW45HF60WDI STGWA45HF60WDI 45HF60WDI Package TO-247 TO-2.