* ( This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature.
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Figure 1.Internal schematic diagram
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 40 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
Applications
• Industrial drives
• UPS
• Solar
• Welding
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Description
*
(
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverte.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STGW40H120DF2 |
STMicroelectronics |
Trench gate field-stop IGBT | |
2 | STGW40H65DFB |
STMicroelectronics |
IGBT | |
3 | STGW40H65DFB-4 |
STMicroelectronics |
IGBT | |
4 | STGW40H65FB |
STMicroelectronics |
IGBT | |
5 | STGW40N120KD |
STMicroelectronics |
1200V short circuit rugged IGBT | |
6 | STGW40NC60KD |
STMicroelectronics |
40A - 600V - short circuit rugged IGBT | |
7 | STGW40NC60V |
ST Microelectronics |
N-CHANNEL IGBT | |
8 | STGW40NC60WD |
ST Microelectronics |
N-CHANNEL IGBT | |
9 | STGW40S120DF3 |
STMicroelectronics |
Trench gate field-stop IGBT | |
10 | STGW40V60DF |
STMicroelectronics |
Trench gate field-stop IGBT | |
11 | STGW40V60F |
STMicroelectronics |
IGBT | |
12 | STGW45HF60WD |
ST Microelectronics |
ultra fast IGB |